SYMBOLS PARAMETERS UNITS RATINGS
VDS
Drain to Source Voltage V 13
VG1S
Gate 1 to Source Voltage V -4.5
V
G2S Gate 2 to Source Voltage V -4.5
ID
Drain Current mA IDSS
PT
Total Power Dissipation mW 200
TCH
Channel Temperature
°C 125
4.0 3.3 9.5 0.25 154 0.4
T
STG
Storage Temperature
°C -55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
Ambient Temperature, TA
(
°C)
Gate 1 to Source Voltage, VG1S
(V)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TYPICAL PERFORMANCE CURVES (T
A
= 25
°C)
Forward Transfer Admittance, |Y
FS
| (mS)
Total Power Dissipation, P
T
(mW)
Drain Current, ID
(mA)
NE25139
(V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA)
FREQ. NFOPT
GA
ΓOPT
(GHz) (dB) (dB) MAG ANG
Rn/50
0.5 0.9 18.5 0.9 18 1.9
0.9 1.2 16.0 0.82 28 1.2
1.5 1.5 14.6 0.71 45 0.9
2.0 1.9 12.5 0.55 75 0.67
3.0 2.5 11.0 0.34 116 0.5
°C)
TYPICAL NOISE PARAMETERS
(T
A
= 25
°C)
Drain Current, I
D
(mA)
250
200
150
100
50
0
0 25 50 75 100 125
FREE AIR
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
Forward Transfer Admittance, |Y
FS
| (mS)
ABSOLUTE MAXIMUM RATINGS1
(TA
= 25
30
20
10
0
0 10 20 30
VG2S
= 1.0 V
VG2S = 0.5 V
VDS = 5 V
f = 1 kHz
Gate 1 to Source Voltage, VG1S
(V)
30
20
10
0
-2.0 -1.0 0 +1.0
0.5 V
0 V
-0.5 V
VG2S = 1.0V
VDS
= 5V
30
20
10
0
-1.0 0 +1.0
0 V
VG2S
= 1.0
0.5 V
-0.5 V
VDS = 5V
f = 1kHz
-2.0
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